Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
PM50CSD120
Intellimod? Module
Three Phase IGBT Inverter Output
50 Amperes/1200 Volts
Absolute Maximum Ratings, T j = 25 ° C unless otherwise specified
Characteristics
Power Device Junction Temperature
Storage Temperature
Case Operating Temperature *
Mounting Torque, M5 Mounting Screws
Mounting Torque, M5 Main Terminal Screws
Module Weight (Typical)
Supply Voltage Protected by OC and SC
Symbol
T j
T stg
T C
V CC(prot.)
PM50CSD120
-20 to 150
-40 to 125
-20 to 100
31
31
560
800
Units
° C
° C
° C
in-lb
in-lb
Grams
Volts
(V D = 13.5 - 16.5V, Inverter Part) T j = 125 ° C Start
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
V ISO
2500
Volts
IGBT Inverter Sector
Collector-Emitter Voltage (V D = 15V, V CIN = 15V)
Collector Current, ± (T C = 25 ° C)
Peak Collector Current, ± (T C = 25 ° C)
Supply Voltage (Applied between P - N)
Supply Voltage, Surge (Applied between P - N)
Collector Dissipation (T C = 25 ° C)
V CES
I C
I CP
V CC
V CC(surge)
P C
1200
50
100
800
1000
328
Volts
Amperes
Amperes
Volts
Volts
Watts
Control Sector
Supply Voltage Applied between (V UP1 -V UPC , V VP1 -V VPC , V WP1 -V WPC , V N1 -V NC )
Input Voltage Applied between (U P -V UPC , V P -V VPC , W P -V WPC , U N , V N , W N -V NC )
Fault Output Supply Voltage Applied between
V D
V CIN
V FO
20
20
20
Volts
Volts
Volts
(U FO -V UPC , V FO -V VPC , W FO -V WPC , F O -V NC )
Fault Output Current (U FO , V FO , W FO , F O )
I FO
20
mA
Electrical and Mechanical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
IGBT Inverter Sector
Collector Cutoff Current
Diode Forward Voltage
Collector-Emitter
I CES
V EC
V CE(sat)
V CE = V CES , T j = 25 ° C, V D = 15V
V CE = V CES , T j = 125 ° C, V D = 15V
-I C = 50A, V D = 15V, V CIN = 15V
V D = 15V, V CIN = 0V, I C = 50A, Pulsed, T j = 25 ° C
2.5
2.4
1.0
10
3.5
3.2
mA
mA
Volts
Volts
Saturation Voltage
Inductive Load Switching Times
t on
V D = 15V, V CIN = 0V, I C = 50A,Pulsed, T j = 125 ° C
0.5
2.1
1.0
2.8
2.5
Volts
μ S
t rr
t C(on)
t off
t C(off)
V D = 15V, V CIN = 0 ~ 15V
V CC = 600V, I C = 50A
T j = 125 ° C, Inductive Load
0.15
0.4
2.5
0.7
0.3
1.0
3.5
1.2
μ S
μ S
μ S
μ S
* T C Measure Point
2
63MM
T C
相关PDF资料
PM50RLA060 MOD IPM L-SER 7PAC 600V 50A
PM50RLA120 MOD IPM L-SER 7PAC 1200V 50A
PM50RLB060 MOD IPM L-SER 7PAC 600V 50A
PM50RLB120 MOD IPM L-SER 7PAC 1200V 50A
PM50RSA060 MOD IPM 7PAC 600V 50A
PM50RSA120 MOD IPM 7PAC 1200V 50A
PM50RSD060 MOD IPM 7PAC 600V 50A
PM50RSD120 MOD IPM 7PAC 1200V 50A
相关代理商/技术参数
PM50CSE060 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE FLAT-BASE TYPE INSULATED PACKAGE
PM50CSE120 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE
PM50CSE120_05 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE
PM50CTJ060-3 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:INSULATED PACKAGE FLAT-BASE TYPE
PM50CTK060 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE
PM50RHA060 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C)
PM50RHA120 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT BASE TYPE INSULATED PACKAGE
PM50RHB060 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C)